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2SB1184-R 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SB1184-R 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page ![]() 2SB1184 -3A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 22-Oct-2012 Rev. B Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) CLASSIFICATION OF hFE Product-Rank 2SB1184-P 2SB1184-Q 2SB1184-R Range 82~180 120~270 180~390 PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current -Continuous IC -3 A Collector Power Dissipation PC 1 W Junction and Storage Temperature Range TJ ,TSTG 150 , -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -60 - - V IC= -50µA, IE=0 Collector-emitter breakdown voltage V (BR)CEO -50 - - V IC= -1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 - - V IE= -50µA, IC=0 Collector cut-off current ICEO - - -1 µ A VCB= -40V, IE=0 Emitter cut-off current IEBO - - -1 µ A VEB= -4V, IC=0 DC current gain hFE 82 - 390 VCE= -3V, IC= -0.5A Collector-emitter saturation voltage VCE(sat) - - -1 V IC= -2A, IB= -200mA Base-emitter saturation voltage VBE(sat) - - -1.2 V IC= -1.5A, IB= -150mA Transition frequency fT - 70 - MHz VCE= -5V, IC= -500mA, fT=30MHz Collector output capacitance Cob - 50 - pF VCB= -10V, f=1MHz, IE=0 Package MPQ Leader Size TO-252 2.5K 13 inch A C D N O P G E F H K J M B D-Pack (TO-252) REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.35 6.8 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 |
类似零件编号 - 2SB1184-R |
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类似说明 - 2SB1184-R |
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