2SD1468-R datasheet(1/1 Pages) SECOS

部件名	2SD1468-R

功能描述	NPN Plastic-Encapsulated Transistor

PDF	1 Pages

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 1 page

2SD1468

1A , 30V

NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente

26-Mar-2012 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low Saturation Voltage

Ideal for Low Voltage, High Current Dribes

High DC Current Gain and High Current

CLASSIFICATION OF hFE

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

15

V

Emitter to Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

1

A

Collector Power Dissipation

PC

625

W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

30

-

V

IC=50µA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

15

-

V

IC=1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=50µA, IC=0

Collector Cut – Off Current

ICBO

-

0.5

µ

A

VCB=20V, IE=0

Emitter Cut – Off Current

IEBO

-

0.5

µ

A

VEB=4V, IC=0

DC Current Gain

hFE

120

-

560

VCE=3V, IC=100mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.4

V

IC=500mA, IB=50mA

Transition Frequency

fT

50

-

MHz

VCE=5V, IC=50mA, f=100MHz

Collector Output Capacitance

Cob

-

30

pF

VCB=10V, IE=0, f=1MHz

Product-Rank

2SD1468-Q

2SD1468-R

2SD1468-S

Range

120~270

180~390

270~560

3

Base

1

Emitter

Collector

2

TO-92

1

1 Emitter

2

2 Collector

3

3 Base

REF.

Millimeter

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76

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