2SD1815-R datasheet(1/2 Pages) SECOS

部件名	2SD1815-R

功能描述	NPN Epitaxial Planar Silicon Transistor

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

2SD1815

3A , 120V

NPN Epitaxial Planar Silicon Transistor

25-Feb-2014 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



A

C

D

H

G E

F

K

B

J

P

M

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Low Collector-to-Emitter Saturation Voltage



Excllent Linearity of hFE



High fT



Fast Switching Time

CLASSIFICATION OF hFE

Product-Rank

2SD1815-Q

2SD1815-R

2SD1815-S

Range

70~140

100~200

140~280

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

120

V

Collector to Emitter Voltage

VCEO

100

V

Emitter to Base Voltage

VEBO

6

V

Collector Current -Continuous

IC

3

A

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55 ~ 150

℃

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

120

-

V

IC=10μA, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

100

-

V

IC=1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

6

-

V

IE=10μA, IC=0

Collector cut-off current

ICBO

-

1

μA

VCB=100V, IE=0

Emitter cut-off current

IEBO

-

1

μA

VEB=4V, IC=0

70

-

280

VCE=5V, IC=500mA

DC current gain

hFE

40

-

VCE=5V, IC=2A

Collector-emitter saturation voltage

VCE(sat)

-

0.4

V

IC=1.5A, IB=150mA

Base -emitter saturation voltage

VBE(sat)

-

1.2

V

IC=1.5A, IB=150mA

Transition frequency

fT

-

180

-

MHz

VCE=10V, IC=500mA

Collector Output Capacitance

COB

-

25

-

pF

VCB=10V, IE=0, f=1MHz

Turn-on time

ton

-

100

-

Storage time

tS

-

900

-

Fall time

tf

-

50

-

nS

VCC=50V, IC=1.5A,

IB1= -IB2= -0.15A

TO-251

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.35

6.80

G

5.40

6.25

B

4.90

5.50

H

0.85

1.50

C

2.15

2.40

J

2.30

D

0.43

0.90

K

0.60

1.05

E

6.50

7.50

M

0.50

0.90

F

7.20

9.65

P

0.43

0.62

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