2SD2153 datasheet(1/2 Pages) SECOS

部件名	2SD2153

功能描述	NPN Plastic Encapsulated Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 2 page

Elektronische Bauelemente

2SD2153

2A , 30V

NPN Plastic Encapsulated Transistor

20-Nov-2013 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

3

Emitter

Collector

2

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Small Flat Package

General Purpose Application

CLASSIFICATION OF hFE(1)

Product-Rank

2SD2153-U

2SD2153-V

Range

560~1200

820~1800

MARKING

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

6

V

Collector Current-Continuous

IC

2

A

Pulsed Collector Current

1

ICP

3

A

Collector Power Dissipation

PC

0.5

W

Maximum Junction to Ambient

RθJA

250

°C / W

Junction & Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-Base Breakdown Voltage

V(BR)CBO

30

-

V

IC=50µA, IE=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

25

-

V

IC=1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

6

-

V

IE=50µA, IC=0

Collector Cut-Off Current

ICBO

-

0.5

µA

VCB=20V, IE=0

Emitter Cut-Off Current

IEBO

-

0.5

µA

VEB=5V, IC=0

DC Current Gain

1

hFE

560

-

1800

VCE=6V, IC=500mA

Collector-Emitter Saturation voltage

VCE(sat)

-

0.5

V

IC=1A, IB=20mA

Transition Frequency

fT

-

110

-

MHz VCE=10V,IC=10mA,f=100MHz

Collector Output Capacitance

COB

-

22

-

pF

VCB=10V, IE=0, f=1MHz

Note:

1. Single pulse, PW=10mS

Package

MPQ

Leader Size

SOT-89

1K

7 inch

SOT-89

A

E

C

D

B

K

H

F

G

L

J

1

2

3

4

B C

E

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.60

G

0.40

0.58

B

3.94

4.25

H

1.50

TYP

C

1.40

1.60

J

3.00

TYP

D

2.25

2.60

K

0.32

0.52

E

1.50

1.85

L

0.35

0.44

F

0.89

1.20

DN

类似零件编号 - 2SD2153

制造商	部件名	数据表	功能描述
Rohm	2SD2153	72Kb / 3P	High gain amplifier transistor (25V, 2A)
Guangdong Kexin Industr...	2SD2153	35Kb / 1P	High Gain Amplifier Transistor
Rohm	2SD2153	164Kb / 3P	High gain amplifier transistor (25V, 2A)
Jiangsu Changjiang Elec...	2SD2153	1Mb / 4P	SOT-89-3L Plastic-Encapsulate Transistors
Nanjing International G...	2SD2153	1Mb / 4P	SOT-89-3L Plastic-Encapsulate Transistors

More results

类似说明 - 2SD2153

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	2N5172	81Kb / 1P	NPN Plastic Encapsulated Transistor
	2N5832	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N6517	142Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1008	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1318A	135Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC1923	83Kb / 1P	NPN Plastic Encapsulated Transistor
	D882S	214Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC4548	77Kb / 1P	NPN Plastic Encapsulated Transistor
	2SBA42	74Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC2668	140Kb / 2P	NPN Plastic-Encapsulated Transistor