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GP800FSM18 数据表(PDF) 1 Page - Dynex Semiconductor

部件名 GP800FSM18
功能描述  Hi-Reliability Single Switch IGBT Module
PDF  10 Pages
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
标志 DYNEX - Dynex Semiconductor

GP800FSM18 数据表(HTML) 1 Page - Dynex Semiconductor

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GP800FSM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
FEATURES
s
High Thermal Cycling Capability
s
800A Per Module
s
Non Punch Through Silicon
s
Isolated MMC Base with AlN Substrates
APPLICATIONS
s
High Reliability Inverters
s
Motor Controllers
s
Traction Drives
s
Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP800FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800FSM18
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1800V
V
CE(sat)
(typ)
3.5V
I
C
(max)
800A
I
C(PK)
(max)
1600A
GP800FSM18
Hi-Reliability Single Switch IGBT Module
DS5402-1.1 January 2001
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: F
(See package details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
External connection
External connection
C1
E1
C2
E2
G
Aux E
Aux C


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