GP800FSS12

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

2/11

THERMAL AND MECHANICAL RATINGS

Symbol

Conditions

DC junction to case

21

Max.

-

Min.

Parameter

Units

R

th(j-c)

Thermal resistance - transistor

T

stg

Storage temperature range

Transistor

150

125

-

–40

R

th(c-h)

Thermal resistance - Case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

8

-

-

Mounting - M6

Nm

5

-

-

T

j

Junction temperature

Screw torque

Diode

125

-

Electrical connections - M4

Nm

2

-

Electrical connections - M8

Nm

10

-

Thermal resistance - diode

DC junction to case

40

-

-

R

th(j-c)

V

CES

Collector-emitter voltage

-

DC, T

1050

Test Conditions

Symbol

I

C

Gate-emitter voltage

V

1200

Units

V

±20

Max.

Parameter

T

Collector current

6000

Maximum power dissipation

P

max

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

Isolation voltage

V

isol

V

2500

V

V

GES

A

I

C(PK)

W

T

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In

extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.

Appropriate safety precautions should always be followed.

DC, T

800

A

1ms, T

A

1600