STS5N15F3 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STS5N15F3

4/12

Doc ID 15472 Rev 2

Electrical characteristics

(TJ = 25 °C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

150

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 150 V,

VDS = 150 V, @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 2.5 A

0.045

0.057

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f = 1 MHz,

VGS = 0

1300

140

20.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 75 V, ID = 5 A

VGS =10 V

Figure 14 on page 8

3.6

14.6

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

-3.7

Ω

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 75 V, ID= 2.5 A,

RG=4.7 Ω, VGS=10 V

Figure 13 on page 8

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