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MDFB85 数据表(PDF) 2 Page - Dynex Semiconductor

部件名 MDFB85
功能描述  Fast Recovery Diode
PDF  8 Pages
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
标志 DYNEX - Dynex Semiconductor

MDFB85 数据表(HTML) 2 Page - Dynex Semiconductor

  MDFB85 Datasheet HTML 1Page - Dynex Semiconductor MDFB85 Datasheet HTML 2Page - Dynex Semiconductor MDFB85 Datasheet HTML 3Page - Dynex Semiconductor MDFB85 Datasheet HTML 4Page - Dynex Semiconductor MDFB85 Datasheet HTML 5Page - Dynex Semiconductor MDFB85 Datasheet HTML 6Page - Dynex Semiconductor MDFB85 Datasheet HTML 7Page - Dynex Semiconductor MDFB85 Datasheet HTML 8Page - Dynex Semiconductor  
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MDFB85
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SURGE RATINGS
Conditions
Max.
Units
20.0
kA
2.0 x 106
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM, Tj = 150
oC
16.0
kA
1.28 x 106
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM, Tj = 150
oC
-kA
-A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 100% V
RRM, Tj = 150
oC
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
oC/W
-
0.021
Anode dc
Clamping force 44.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.03
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.06
oC/W
oC/W
Cathode dc
-
0.023
oC/W
Double side cooled
-
0.011
oC/W
T
stg
Storage temperature range
-55
175
oC
kN
48.0
41.0
Clamping force
-
T
vj
Virtual junction temperature
On-state (conducting)
-
150
oC
Min.
CHARACTERISTICS
t
rr
200
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
µs, T
j = 125
oC-
80
V
At T
vj = 150
oC
-
0.35
m
Ω
At T
vj = 150
oC
-
1.5
V
1.8
-
-
400
-
A
-
1200
µC
-
6.0
µs
At V
RRM, Tcase = 150
oC-
mA
At 2000A peak, T
case = 25
oC
-
2.2
V
Conditions
Max.
I
F = 1000A, diRR/dt = 100A/µs
T
case = 150
oC, V
R = 100V



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