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MP04HB910 数据表(PDF) 2 Page - Dynex Semiconductor

部件名 MP04HB910
功能描述  Dual Rectifier Diode Module Preliminary Information
PDF  7 Pages
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
标志 DYNEX - Dynex Semiconductor

MP04HB910 数据表(HTML) 2 Page - Dynex Semiconductor

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MP04HB910
Half wave resistive load
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
oC/W
-
0.060
Halfwave
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-
Thermal resistance - junction to case
(per diode)
R
th(j-c)
Symbol
Parameter
Screw torque
6 (53)
-
Nm (lb.ins)
–40
150
oC
Reverse (blocking)
-
150
oC
3 Phase
-
0.066
oC/W
-
0.056
oC/W
Symbol
Parameter
Conditions
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
Units
Max.
915
A
T
case = 85
oC
830
A
T
case = 100
oC
695
A
T
case = 75
oC
1440
A
T
case = 85
oC
1305
A
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case = 75
oC
10ms half sine; T
j = 150
oC
V
R = 0
10ms half sine; T
j = 150
oC
V
R = 50% VRRM
I
FSM
Surge (non-repetitive) forward current
I
2tI2t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2t
I
2t for fusing
1.28 x 10
6
A
2s
16
kA
2.0 x 106
A2s
20
kA
V
isol
Isolation voltage
3000
V
Commoned terminals to base plate AC RMS, 1 min, 50Hz
Mounting
-
-
12 (106) Nm (lb.ins)
Electrical connections
-
1580
g
-
-
Weight (nominal)
T
case = 100
oC
1090
A



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