TA329..Q

2/10

THERMAL AND MECHANICAL DATA

dc

Conditions

Min.

Max.

Units

-

0.153

Anode dc

Clamping force 4.0kN

with mounting compound

Thermal resistance - case to heatsink

R

th(c-h)

0.02

Double side

-

125

T

vj

Virtual junction temperature

T

stg

Storage temperature range

Reverse (blocking)

Single side

-

Thermal resistance - junction to case

R

th(j-c)

Single side cooled

Symbol

Parameter

Clamping force

3.6

4.4

kN

-40

150

-

On-state (conducting)

-

135

-

0.04

Cathode dc

-

0.204

Double side cooled

-

0.085

DYNAMIC CHARACTERISTICS

V

TM

Parameter

Symbol

Conditions

Maximum on-state voltage

At 600A peak, T

I

RRM

Peak reverse current

At V

Gate source 20V, 20

Ω

t

dV/dt

Maximum linear rate of rise of off-state voltage

To 60% V

Min.

Max.

Units

-

2.5

V

-30

mA

-

1000

V/

µs

-

1000

A/

µs

Rate of rise of on-state current

dI/dt

t

q

†

Max. gate assisted turn-off time

(with feedback diode)

T

t

V

dV/dt = 600V/

µs (linear to 60% V

V

7

-

µs

I

DRM

Off-state current

At V

1

mA

Non-repetitive

-

500

A/

µs

Repetitive

t

q

Max. turn-off time

(with feedback diode)

T

t

dV/dt = 600V/

µs (linear to 60% V

Gate open.

10

-

µs