TF707..L

3/5

DYNAMIC CHARACTERISTICS

V

TM

Parameter

Symbol

Conditions

Maximum on-state voltage

At 1000A peak, T

I

Peak reverse and off-state current

At V

Gate source 20V, 20

Ω

t

dV/dt

Maximum linear rate of rise of off-state voltage

Linear to 60% V

Min.

Max.

Units

-

2.8

V

-80

mA

-

300

V/

µs

Repetitive 50Hz

-

500

A/

µs

Non-repetitive

-

800

A/

µs

Rate of rise of on-state current

dI/dt

V

T(TO)

Threshold voltage

At T

r

T

On-state slope resistance

At T

1.8

-V

-

1.0

m

Ω

Delay time

t

gd

--*

µs

Total turn-on time

t

(ON)TOT

--*

µs

T

V

dI/dt = 50A/

µs, dI

*Typical value.

I

H

Holding current

T

100*

-

mA

T

dV/dt = 20V/

µs (Linear to 60% V

dI

Turn-off time

t

q

100

-

µs

t

q

code: L

GATE TRIGGER CHARACTERISTICS AND RATINGS

I

L

Latching current

T

300*

-

mA

Reverse recovery charge

Q

RR

500

-

µC

Symbol

Parameter

Conditions

Gate non-trigger voltage

V

Units

Max.

3.0

0.25

Typ.

mA

V

V

GD

Gate trigger voltage

300

V

GT

I

GT

Gate trigger current

At V

V

R

V

-

-

-

V

30

0.25

V

V

RGM

Peak reverse gate voltage

V

5.0

-

A

-

-

-

10

I

FGM

Peak forward gate current

Peak forward gate voltage

V

FGM

V

FGN

Peak forward gate voltage

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

P

GM

P

G(AV)

Peak gate power

Mean gate power

-

-

50

3.0

W

W