TF708..B

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DYNAMIC CHARACTERISTICS

V

TM

Parameter

Symbol

Conditions

Maximum on-state voltage

At 2000A peak, T

I

Peak reverse and off-state current

At V

Gate source 20V, 20

Ω

t

dV/dt

Maximum linear rate of rise of off-state voltage

Linear to 60% V

Min.

Max.

Units

-

2.8

V

-60

mA

-

300

V/

µs

Repetitive 50Hz

-

500

A/

µs

Non-repetitive

-

800

A/

µs

Rate of rise of on-state current

dI/dt

V

T(TO)

Threshold voltage

At T

r

T

On-state slope resistance

At T

1.25

-V

-

0.77

m

Ω

Delay time

t

gd

-2*

µs

Total turn-on time

t

(ON)TOT

-4*

µs

T

V

dI/dt = 50A/

µs, dI

*Typical value.

I

H

Holding current

T

100*

-

mA

T

dV/dt = 20V/

µs (Linear to 60% V

dI

Turn-off time

t

q

40

-

µs

t

q

code: B

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

T

Conditions

Parameter

Symbol

V

GT

Gate trigger voltage

V

I

GT

Gate trigger current

V

GD

Gate non-trigger voltage

At V

-

3.0

V

-

200

mA

-

0.2

V

Typ.

Max.

Units

V

RGM

Peak reverse gate voltage

I

FGM

Peak forward gate current

Anode positive with respect to cathode

P

GM

Peak gate power

P

G(AV)

Mean gate power

-

5.0

V

-10

A

-50

W

-3

W

I

L

Latching current

T

300*

-

mA