XT2116

2/4

SURGE RATINGS

Conditions

Max.

Units

Symbol

Parameter

I

TSM

Surge (non-repetitive) forward current

I

3200

800

A

10ms half sine; T

THERMAL AND MECHANICAL DATA

Conditions

Min.

Max.

Units

Thermal resistance - junction to case

R

th(j-c)

Symbol

Parameter

d.c.

-

0.35

Mounting torque 3.5Nm

with mounting compound

Thermal resistance - case to heatsink

R

th(c-h)

0.25

-

T

vj

Virtual junction temperature

On-state (conducting)

-

125

T

stg

Storage temperature range

-

-55

125

Mounting torque

4.0

Nm

DYNAMIC CHARACTERISTICS

V

TM

Parameter

Symbol

Conditions

Maximum on-state voltage

At I

I

Peak reverse and off-state current

At V

Half sine wave of 2

µs, T

Gate source 20V, 10

Ω. t

dV/dt

Maximum linear rate of rise of off-state voltage

T

Typ.

Max.

Units

-V

-

10/10

mA

-

300

V/

µs

-

2000

A/

µs

Rate of rise of on-state current

dI/dt

Latching current

-

I

L

45

-

mA

I

H

Holding current

-

t

d

Delay time

V

35

-

mA

-

250

ns

I

R

µs

-

Circuit commutated turn-off time

t

q

2.0

µs.

T

case

= 25˚C unless otherwise stated.

* Recommended value.