2SC5437 datasheet(1/8 Pages) NEC

部件名	2SC5437

功能描述	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

PDF	8 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

标志

1 / 8 page

©

1998

PRELIMINARY DATA SHEET

FEATURE

•

Ultra super mini-mold thin flat package

(1.4 mm

× 0.8 mm × 0.59 mm: TYP.)

•

Contains same chip as 2SC5195

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

100

mA

Total Power Dissipation

PT

125

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

SILICON TRANSISTOR

2SC5437

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Document No. P13146EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

PACKAGE DIMENSIONS (in mm)

1.4 ± 0.05

0.8 ± 0.1

1

3

2

PIN CONNECTIONS

1: Emitter

2: Base

3: Collector

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

100

nA

DC Current Gain

hFE

VCE = 1 V, IC = 3 mANote 1

80

145

Reverse Transfer Capacitance

Cre

VCB = 1 V, IE = 0, f = 1 MHzNote 2

0.7

0.8

pF

Gain Bandwidth Product (1)

fT (1)

VCE = 1 V, IC = 3 mA, f = 2 GHz

4.0

5.0

GHz

Gain Bandwidth Product (2)

fT (2)

VCE = 3 V, IC = 20 mA, f = 2 GHz

9.5

GHz

Insertion Power Gain (1)

|S21e|2 (1)

VCE = 1 V, IC = 3 mA, f = 2 GHz

3.0

4.0

dB

Insertion Power Gain (2)

|S21e|2 (2)

VCE = 3 V, IC = 20 mA, f = 2 GHz

8.0

dB

Noise Figure (1)

NF (1)

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.9

2.5

dB

Noise Figure (2)

NF (2)

VCE = 3 V, IC = 7 mA, f = 2 GHz

1.7

dB

Notes 1. Pulse measurement PW

≤ 350

µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

类似零件编号 - 2SC5437

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California Eastern Labs	2SC5437	43Kb / 3P	NPN SILICON TRANSISTOR
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