Elektronische Bauelemente

SSP7404NA

Ω

Ω

Ω

N-Channel Enhancement MOSFET

30-Dec-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Static

Gate-Threshold Voltage

1

-

-

V

Gate-Body Leakage

-

-

±100

nA

-

-

1

Zero Gate Voltage Drain Current

-

-

25

µA

On-State Drain Current

1

50

-

-

A

-

-

2.8

Drain-Source On-Resistance

1

-

-

4

m

Forward Transconductance

1

-

26

-

S

Diode Forward Voltage

-

0.73

-

V

Dynamic

2

Total Gate Charge

-

64

-

Gate-Source Charge

-

17

-

Gate-Drain Charge

-

32

-

nC

Turn-On Delay Time

-

17

-

Rise Time

-

28

-

Turn-Off Delay Time

-

168

-

Fall Time

-

65

-

nS

Input Capacitance

-

13001

-

Output Capacitance

-

966

-

Reverse Transfer Capacitance

-

939

-

pF

Notes:

1.

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.