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2SC5507 数据表(PDF) 2 Page - NEC |
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2SC5507 数据表(HTML) 2 Page - NEC |
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2 / 12 page ![]() Preliminary Data Sheet P13864EJ1V0DS00 2 2SC5507 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 – – 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 – – 100 nA DC Current Gain hFE Note 1 VCE = 2 V, IC = 5 mA 50 70 100 – RF Characteristics Reverse Transfer Capacitance Cre Note 2 VCB = 2 V, IE = 0, f = 1 MHz – 0.08 0.12 pF Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA, f = 2 GHz 20 25 – GHz Noise Figure NF VCE = 2 V, IC = 2 mA, f = 2 GHz, ZS = Zopt –1.2 1.5 dB Insertion Power Gain |S21e|2 VCE = 2 V, IC = 5 mA, f = 2 GHz 14 17 – dB Maximum Stable Power Gain MSG Note 3 VCE = 2 V, IC = 5 mA, f = 2 GHz – 22 – dB Output Power at 1 dB Compression Point P-1 VCE = 2 V, IC = 5 mA Note 4, f = 2 GHz –5 – dBm Output Power at Third Order Intercept Point OIP3 VCE = 2 V, IC = 5 mA Note 4, f = 2 GHz –15 – – Notes 1. Pulse measurement PW ≤ 350 µs, Duty cycle ≤ 2% 2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin 3. S21 MSG = S12 4. Collector current when P-1 is output hFE CLASSIFICATION Rank FB Marking T78 hFE 50 to 100 |
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