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2SC5606 数据表(PDF) 2 Page - NEC

部件名 2SC5606
功能描述  NPN SILICON RF TRANSISTOR FOR LOW NOISEHIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
PDF  6 Pages
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制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC

2SC5606 数据表(HTML) 2 Page - NEC

  2SC5606 Datasheet HTML 1Page - NEC 2SC5606 Datasheet HTML 2Page - NEC 2SC5606 Datasheet HTML 3Page - NEC 2SC5606 Datasheet HTML 4Page - NEC 2SC5606 Datasheet HTML 5Page - NEC 2SC5606 Datasheet HTML 6Page - NEC  
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Preliminary Data Sheet P14658EJ2V0DS00
2
2SC5606
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
50
70
100
RF Characteristics
Gain Bandwidth Product
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
21
GHz
Insertion Power Gain
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
10
12.5
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
–1.2
1.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.21
0.3
pF
Maximum Available Gain
MAG.
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
14
dB
Maximum Stable Power Gain
MSG.
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
15
dB
Note 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2 %
2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3. MAG. =
4. MSG. =
hFE CLASSIFICATION
Rank
FB
Marking
UA
hFE
50 to 100
(k –
√√√√ (k2 – 1) )
S21
S12
S21
S12



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