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2SC5606 数据表(PDF) 2 Page - NEC |
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2SC5606 数据表(HTML) 2 Page - NEC |
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2 / 6 page ![]() Preliminary Data Sheet P14658EJ2V0DS00 2 2SC5606 ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 200 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 200 nA DC Current Gain hFE Note 1 VCE = 2 V, IC = 5 mA 50 70 100 – RF Characteristics Gain Bandwidth Product fT VCE = 2 V, IC = 20 mA, f = 2 GHz – 21 – GHz Insertion Power Gain S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz 10 12.5 – dB Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt –1.2 1.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.21 0.3 pF Maximum Available Gain MAG. Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz – 14 – dB Maximum Stable Power Gain MSG. Note 4 VCE = 2 V, IC = 20 mA, f = 2 GHz – 15 – dB Note 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2 % 2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin 3. MAG. = 4. MSG. = hFE CLASSIFICATION Rank FB Marking UA hFE 50 to 100 (k – √√√√ (k2 – 1) ) S21 S12 S21 S12 |
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