KSA539-R datasheet(1/1 Pages) SECOS

部件名	KSA539-R

功能描述	PNP Plastic Encapsulated Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 1 page

KSA539

-0.2A , -60V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

07-Dec-2012 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

3

Collector

1

Emitter

Base

2

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

Low Saturation Medium Current Application.

Complementary to KSC815

CLASSIFICATION OF hFE

Product-Rank

KSA539-R

KSA539-O

KSA539-Y

Range

40~80

70~140

120~240

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

-60

V

Collector to Emitter Voltage

VCEO

-45

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current - Continuous

IC

-200

mA

Collector Power Dissipation

PC

400

mW

Thermal Resistance From Junction To Ambient

RθJA

312

°C / W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

V(BR)CBO

-60

-

V

IC= -0.1mA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

-45

-

V

IC= -10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

-5

-

V

IE= -0.01mA, IC=0

Collector Cut-Off Current

ICBO

-

-0.1

µ

A

VCB= -45V, IE=0

Emitter Cut-Off Current

IEBO

-

-0.1

µ

A

VEB= -3V, IC=0

DC Current Gain

hFE

40

-

240

VCE= -1V, IC= -50mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

-0.5

V

IC= -150mA, IB= -15mA

Base to Emitter Saturation Voltage

VBE(sat)

-

-1.2

V

IC= -150mA, IB= -15mA

Base to Emitter Voltage

VBE

-0.6

-

-0.9

V

VCE= -1V, IC= -10mA

TO-92

1

1 Emitter

2

2 Base

3

3 Collector

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

4.40

4.70

F

0.30

0.51

B

4.30

4.70

G

1.27 TYP.

C

12.70

-

H

1.10

1.40

D

3.30

3.81

J

2.42

2.66

E

0.36

0.56

K

0.36

0.76

类似零件编号 - KSA539-R

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	KSA539	37Kb / 4P	Low Frequency Amplifier
SHENZHEN YONGERJIA INDU...	KSA539	125Kb / 1P	TRANSISTOR (PNP)
Foshan Blue Rocket Elec...	KSA539	818Kb / 6P	Silicon PNP transistor in a TO-92 Plastic Package
Jiangsu Changjiang Elec...	KSA539	368Kb / 3P	TO-92 Plastic-Encapsulate Transistors
Fairchild Semiconductor	KSA539CYTA	37Kb / 4P	Low Frequency Amplifier

More results

类似说明 - KSA539-R

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	2SA733	284Kb / 2P	PNP Plastic Encapsulated Transistor
	2SA1013	375Kb / 2P	PNP Plastic Encapsulated Transistor
	2N4402	109Kb / 1P	PNP Plastic Encapsulated Transistor
	2SA733	420Kb / 2P	PNP Plastic Encapsulated Transistor
	2SA844	83Kb / 1P	PNP Plastic Encapsulated Transistor
	2SA1300	401Kb / 2P	PNP Plastic Encapsulated Transistor
	2SB1068	84Kb / 1P	PNP Plastic Encapsulated Transistor
	A1015	449Kb / 2P	PNP Plastic-Encapsulated Transistor
	2SB1184	76Kb / 1P	PNP Plastic Encapsulated Transistor
	KTA1266	69Kb / 1P	PNP Plastic Encapsulated Transistor