KSC815-R datasheet(1/1 Pages) SECOS

部件名	KSC815-R

功能描述	NPN Plastic-Encapsulated Transistor

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 1 page

KSC815

0.2A , 60V

NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente

26-Dec-2012 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low Collector Current

Complementary To KSA539

Low Frequency Amplifier & High Frequency Oscillator

CLASSIFICATION OF hFE

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

45

V

Emitter to Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

200

mA

Collector Power Dissipation

PC

400

mW

Thermal Resistance From Junction To Ambient

RθJA

312

°C / W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

60

-

V

IC=0.1mA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

45

-

V

IC=10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=0.01mA, IC=0

Collector Cut – Off Current

ICBO

-

0.1

µ

A

VCB=45V, IE=0

Emitter Cut – Off Current

IEBO

-

0.1

µ

A

VEB=3V, IC=0

DC Current Gain

hFE

40

-

400

VCE=1V, IC=50mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.4

V

IC=150mA, IB=15mA

Base to Emitter Saturation Voltage

VBE(sat)

-

1.1

V

IC=150mA, IB=15mA

Base to Emitter Voltage

VBE

0.6

-

0.9

V

VCE=10V, IC=10mA

Collector Output Capacitance

Cob

-

4

-

pF

VCB=10V, IE=0, f=1MHz

Transition Frequency

fT

100

-

MHz

VCE=10V, IC=10mA

Product-Rank

KSC815-R

KSC815-O

KSC815-Y

KSC815-G

Range

40~80

70~140

120~240

200~400

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

4.40

4.70

F

0.30

0.51

B

4.30

4.70

G

1.27 TYP.

C

12.70

-

H

1.10

1.40

D

3.30

3.81

J

2.42

2.66

E

0.36

0.56

K

0.36

0.76

1

1Emitter

2

2Base

3

3Collector

TO-92

2

Base

1

Emitter

Collector

3

类似零件编号 - KSC815-R

制造商	部件名	数据表	功能描述
Samsung semiconductor	KSC815	77Kb / 2P	NPN (LOW, HIGH FREQUENCY AMPLIFIER, OSCILLATOR)
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SHENZHEN YONGERJIA INDU...	KSC815	132Kb / 1P	TRANSISTOR (NPN)
Foshan Blue Rocket Elec...	KSC815	849Kb / 6P	Silicon NPN transistor in a TO-92 Plastic Package
Jiangsu Changjiang Elec...	KSC815	420Kb / 3P	TO-92 Plastic-Encapsulate Transistors

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类似说明 - KSC815-R

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