Elektronische Bauelemente

SCS40STN

0.12 A, 40 V

Silicon Epitaxial Planar Schottky Barrier Rectifiers

13-Dec-2013 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring

for stress protection

FEATURES

●

Low diode capacitance

●

Low forward voltage

●

Guard ring protected

●

High breakdown voltage

APPLICATION

●

Ultra high-speed switching

●

Voltage clamping

●

Mobile communication ,digital (still) cameras ,

PDAs and PCMCIA cards

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

WBFBP-02C

10K

7 inch

Parameter

Symbol

Limits

Unit

DC reverse voltage

40

V

Forward continuous current

120

mA

Peak forward surge current @ Tp< 10ms

200

mA

Junction, Storage Temperature Range

150, -55 ~ 150

℃

Parameters

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

0.38

-

-

0.5

Forward Voltage

-

-

1

V

-

-

1

Reverse Current

1

-

-

10

μA

Diode capacitance

-

-

5

pF

Note:

1. Pulse Test: tp=300μs; δ=0.02.

WBFBP-02C

S6

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.950

1.050

G

0.275

0.325

B

0.550

0.650

H

0.275

0.325

C

0.450

0.550

J

0.275

0.325

D

0.450 REF.

K

0.675

0.725

E

0.400 REF.

L

0.010

0.070

F

0.275

0.325

M

0.010 REF.





A

C

B

F

M

M

G

J

H

K

E

D

L