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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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IRFS4228TRLPBF 数据表(PDF) 2 Page - International Rectifier |
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IRFS4228TRLPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFS/SL4228PbF 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 150 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12 15 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 1.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 170 ––– ––– S Qg Total Gate Charge ––– 71 107 nC Qgd Gate-to-Drain Charge ––– 21 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 59 ––– ns td(off) Turn-Off Delay Time ––– 24 ––– tf Fall Time ––– 33 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 4530 ––– Coss Output Capacitance ––– 550 ––– pF Crss Reverse Transfer Capacitance ––– 100 ––– Coss eff. Effective Output Capacitance ––– 480 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energyd mJ EAR Repetitive Avalanche Energy mJ VDS(Avalanche) Repetitive Avalanche Voltageà V IAS Avalanche Current Ãd A Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– 83 (Body Diode) A ISM Pulsed Source Current ––– ––– 330 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 76 110 ns Qrr Reverse Recovery Charge ––– 230 350 nC VDD = 75V, VGS = 10VÃe ID = 50A RG = 2.5Ω See Fig. 22 MOSFET symbol VDS = 25V, ID = 50A VDD = 75V, ID = 50A, VGS = 10Ve Conditions and center of die contact VDD = 120V, VGS = 15V, RG= 5.1Ω VDS = 120V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.3µF, VGS = 15V VDS = 120V, RG= 5.1Ω, TJ = 100°C VDS = 25V VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VGS = 0V, VDS = 0V to 120V VDS = 150V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 0V L = 220nH, C= 0.3µF, VGS = 15V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 33A e TJ = 25°C, IF = 50A, VDD = 50V di/dt = 100A/µs e TJ = 25°C, IS = 50A, VGS = 0V e showing the integral reverse p-n junction diode. Typ. Max. ƒ = 1.0MHz ––– 120 33 50 ––– ––– 180 ––– ––– 58 ––– ––– 110 ––– |
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