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RG2Z 数据表(PDF) 1 Page - EIC discrete Semiconductors

部件名 RG2Z
功能描述  ULTRA FAST RECOVERY RECTIFIER DIODES
PDF  2 Pages
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制造商  EIC [EIC discrete Semiconductors]
网页  http://www.eicsemi.com
标志 EIC - EIC discrete Semiconductors

RG2Z 数据表(HTML) 1 Page - EIC discrete Semiconductors

  RG2Z Datasheet HTML 1Page - EIC discrete Semiconductors RG2Z Datasheet HTML 2Page - EIC discrete Semiconductors  
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RG2 - RG2Z
ULTRA FAST RECOVERY
RECTIFIER DIODES
PRV : 200 - 400 Volts
Io : 1.2 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL
RG2Z
RG2
UNITS
Maximum Peak Reverse Voltage
VRM
200
400
Volts
Maximum Peak Reverse Surge Voltage
VRSM
200
400
Volts
Maximum Average Forward Current Ta = 60
°C
IF(AV)
1.2
Amps.
Maximum Peak Forward Surge Current
(50 Hz, Half-cycle, Sine wave, Single Shot)
IFSM
50
Amps.
Maximum Forward Voltage at IF = 1.5A
VF
1.5
Volts
Maximum Reverse Current at VR = VRM Ta = 25
°C
IR
0.5
mA
Maximum Reverse Current at VR = VRM Ta = 100
°C
IR(H)
2.5
mA
Maximum Reverse Recovery Time ( Note 1 )
Trr
100
ns
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA.
UPDATE : APRIL 23, 1998
0.034 (0.86)
0.028 (0.71)
D2
0.284 (7.21)
0.268 (6.81)
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )


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