Elektronische Bauelemente

SSPS7630N

Ω

Ω

Ω

Dual-N Channel Mode Power MOSFET

28-Jun-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

1

-

-

V

Gate-Body Leakage Current

-

-

±100

nA

-

-

1

µA

Zero Gate Voltage Drain Current

-

-

25

µA

On-State Drain Current

1

15

-

-

A

-

-

19

Drain-Source On-Resistance

1

-

-

28

m

Forward Transconductance

1

-

17

-

S

Diode Forward Voltage

-

0.71

-

V

Dynamic

2

Total Gate Charge

-

5.2

-

Gate-Source Charge

-

1.7

-

Gate-Drain Charge

-

2

-

nC

Input Capacitance

-

528

-

Output Capacitance

-

110

-

Reverse Transfer Capacitance

-

72

-

pF

f =1.0MHz

Turn-On Delay Time

-

2

-

Rise Time

-

5

-

Turn-Off Delay Time

-

20

-

Fall Time

-

6

-

nS

Notes:

1.

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.