SSRF02N65SL datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

SSRF02N65SL

2A , 650V , RDS(ON) 4.8

N-Ch Enhancement Mode Power MOSFET

25-Sep-2013 Rev. A

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

650

VGS=0, ID= 250µA

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Source Leakage Current

IGSS

±100

VGS= ±30V

Drain-Source Leakage Current

IDSS

µA

VDS=650V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

4.3

4.8

VGS=10V, ID=1A

Total Gate Charge

1.2

5.83

Gate-Source Charge

1.2

Qgs

1.73

Gate-Drain Change

1.2

Qgd

ID=2A

VDS=520V

VGS=10V

Turn-on Delay Time

1.2

Td(on)

10.67

Rise Time

1.2

Turn-off Delay Time

1.2

Td(off)

12.4

Fall Time

1.2

VDD=325V

ID=2A

RG=25

Input Capacitance

Ciss

261.8

Output Capacitance

Coss

34.3

Reverse Transfer Capacitance

Crss

1.3

VGS =0

VDS=25V

f =1.0MHz

Source-Drain Diode

Diode Forward Voltage

VSD

1.4

IS=2A, VGS=0

Continuous Source Current

Pulsed Source Current

ISM

Integral Reverse P-N

Junction Diode in the

MOSFET

Reverse Recovery Time

Trr

368.88

Reverse Recovery Charge

Qrr

1.08

µC

IS=2A,VGS=0,

dlF/dt=100A/µS

Notes:

Pulse Test: Pulse width ≦300µS, Duty cycle≦2%

Essentially independent of operating temperature.

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