SSU07N65SL datasheet(1/5 Pages) SECOS

部件名	SSU07N65SL

功能描述	N-Ch Enhancement Mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 5 page

Elektronische Bauelemente

SSU07N65SL

7A , 650V , RDS(ON) 1.4

N-Ch Enhancement Mode Power MOSFET

08-Oct-2013 Rev. A

Page 1 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

TO-263

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSU07N65SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent RDS(on) and gate charge for most of the synchronous

buck converter applications .

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

±30

V

TC=25°C

7

A

Continuous Drain Current

TC=100°C

ID

4

A

Pulsed Drain Current

IDM

28

A

TC=25°C

140

Total Power Dissipation

Derate above 25°C

PD

1.12

W

Single Pulse Avalanche Energy

1

EAS

435

mJ

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

RθJA

0.89

°C / W

Maximum Thermal Resistance Junction-Case

RθJC

62.5

°C / W

Notes:

1. L=30mH,IAS=5A, VDD=100V, RG=25 , Starting TJ =25°C

1

Gate

3

Source

2

Drain

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.00

4.85

c2

1.10

1.65

b

0.51

1.00

b2

1.34 REF

L4

0.00

0.30

D

8.0

9.65

C

0.30

0.74

e

2.54 REF

L3

1.50 REF

L

14.6

15.88

L1

1.78

2.79

L2

1.27 REF

E

9.60

10.67

类似零件编号 - SSU07N65SL

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SSU07N65SL 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

SSU07N65SL 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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