SSG4407PE

Ω

Ω

Ω

P-Channel Mode Power MOSFET

Elektronische Bauelemente

11-Oct-2012 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

-1

-

-

V

Gate-Body Leakage Current

-

-

±10

µA

Zero Gate Voltage Drain Current

-

-

-1

µA

-

-

-5

On-State Drain Current

1

-50

-

-

A

Drain-Source On-Resistance

1

-

-

9

m

-

-

13

Forward Transconductance

1

-

44

-

S

Diode Forward Voltage

-

-0.7

-

V

Dynamic

2

Total Gate Charge

-

50

-

nC

Gate-Source Charge

-

10

-

Gate-Drain Charge

-

20

-

Turn-On Delay Time

-

10

-

nS

Rise Time

-

30

-

Turn-Off Delay Time

-

100

-

Fall Time

-

50

-

Notes:

1

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

2

Guaranteed by design, not subject to production testing.