SSG4510

N & P-Ch Enhancement Mode Power MOSFET

Ω

Ω

Ω

Ω

Ω

Ω

Elektronische Bauelemente

18-Jun-2012 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

100

-

-

V

Gate Threshold Voltage

1.0

-

2.5

V

Forward Transconductance

-

20

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1

µA

-

-

5

Static Drain-Source On-Resistance

2

-

-

112

m

-

-

120

Total Gate Charge

2

-

26.2

-

nC

Gate-Source Charge

-

3.8

-

Gate-Drain (“Miller”) Change

-

4.8

-

Turn-on Delay Time

2

-

4.2

-

nS

Rise Time

-

7.6

-

Turn-off Delay Time

-

41

-

Fall Time

-

14

-

Input Capacitance

-

1535

-

pF

f=1.0MHz

Output Capacitance

-

60

-

Reverse Transfer Capacitance

-

37

-

Source-Drain Diode

Forward On Voltage

2

-

-

1.2

V

Continuous Source Current(Body Diode)

-

-

2.5

A

1

-

-

10

A

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3.Surface mounted on 1 in2 copper pad of FR4 board; 135℃/W when mounted on Min. copper pad.