| 数据搜索系统,热门电子元器件搜索 |
|
EL2001CM 数据表(PDF) 7 Page - Elantec Semiconductor |
|
|
|||||||||||||||||||||||||||||
EL2001CM 数据表(HTML) 7 Page - Elantec Semiconductor |
|
7 / 12 page ![]() EL2001C Low Power 70 MHz Buffer Amplifier Burn-In Circuit 2001 – 9 Simplified Schematic 2001 – 10 Application Information The EL2001 is a monolithic buffer amplifier built on Elantec’s proprietary dielectric isolation pro- cess that produces NPN and PNP transistors with essentially identical DC and AC characteris- tics The EL2001 takes full advantage of the com- plementary process with a unique circuit topolo- gy Elantec has applied for two patents based on the EL2001’s topology The patents relate to the base drive and feedback mechanism in the buffer This feedback makes 2000 V ms slew rates with 100X loads possible with very low supply current Power Supplies The EL2001 may be operated with single or split supplies with total voltage difference between 10V (g5V) and 36V (g18V) It is not necessary to use equal split value supplies For example b 5V and a12V would be excellent for signals from b2V to a9V Bypass capacitors from each supply pin to ground are highly recommended to reduce supply ringing and the interference it can cause At a minimum 1 mF tantalum capacitor with short leads should be used for both supplies Input Characteristics The input to the EL2001 looks like a resistance in parallel with about 35 picofarads in addition to a DC bias current The DC bias current is due to the miss-match in beta and collector current be- tween the NPN and PNP transistors connected to the input pin The bias current can be either positive or negative The change in input current with input voltage (RIN) is affected by the out- put load beta and the internal boost RIN can actually appear negative over portions of the in- put range typical input current curves are shown in the characteristic curves Internal clamp di- odes from the input to the output are provided These diodes protect the transistor base emitter junctions and limit the boost current during slew to avoid saturation of internal transistors The diodes begin conduction at about g25V input to output differential When that happens the input resistance drops dramatically The diodes are rat- ed at 50 mA When conducting they have a series resistance of about 20 X There is also 100X in series with the input that limits input current Above g75V differential input to output addi- tional series resistance should be added Source Impedance The EL2001 has good input to output isolation When the buffer is not used in a feedback loop capactive and resistive sources up to 1 Meg pres- ent no oscillation problems Care must be used in board layout to minimize output to input cou- pling CAUTION When using high source im- pedances (RS l 100 kX) significant gain errors can be observed due to output offset load resis- tor and the action of the boost circuit See typi- cal performance curves 7 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |