SSPS924NE datasheet(2/4 Pages) SECOS

2 / 4 page

SSPS924NE

9.2A , 20V , RDS(ON) 12 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

06-Mar-2012 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±10

µA

VDS=0, VGS=±8V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=16V, VGS=0

VDS=16V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=4.5V

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=7.4A

VGS=2.5V, ID=6.8A

Forward Transconductance

gfs

VDS=10V, ID=7.4A

Diode Forward Voltage

VSD

0.7

IS=1.3A, VGS=0

Dynamic

Total Gate Charge

VDS=10V,

VGS=4.5V,

ID=7.4A

Gate-Source Charge

Qgs

4.4

Gate-Drain Charge

Qgd

3.9

Input Capacitance

Ciss

1663

VDS=15V,

VGS=0

f=1MHz

Output Capacitance

Coss

145

Reverse Transfer Capacitance

Crss

139

Turn-On Delay Time

Td(on)

VDS=10V

ID=7.4A

VGEN=4.5V

RL=1.4

RGEN=6

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW≦300µs duty cycle≦2%.

Guaranteed by design, not subject to production testing.

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