| 数据搜索系统,热门电子元器件搜索 |
|
EL2075CS 数据表(PDF) 8 Page - Elantec Semiconductor |
|
|
|||||||||||||||||||||||||||||
EL2075CS 数据表(HTML) 8 Page - Elantec Semiconductor |
|
8 / 11 page ![]() 8 EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier Applications Information Product Description The EL2075C is a wideband monolithic operational amplifier built on a high-speed complementary bipolar process. The EL2075C uses a classical voltage-feedback topology which allows it to be used in a variety of appli- cations requiring a noise gain ≥10 where current- feedback amplifiers are not appropriate because of restrictions placed upon the feedback element used with the amplifier. The conventional topology of the EL2075C allows, for example, a capacitor to be placed in the feedback path, making it an excellent choice for applications such as active filters, sample-and-holds, or integrators. Similarly, because of the ability to use diodes in the feedback network, the EL2075C is an excellent choice for applications such as log amplifiers. The EL2075C also has excellent DC specifications: 200µV, VOS, 2µA IB, 0.1µA IOS, and 90dB of CMRR. These specifications allow the EL2075C to be used in DC-sensitive applications such as difference amplifiers. Furthermore, the current noise of the EL2075C is only 3.2 pA/ √Hz, making it an excellent choice for high-sen- sitivity transimpedance amplifier configurations. Gain-Bandwidth Product The EL2075C has a gain-bandwidth product of 2GHz. For gains greater than 40, its closed-loop -3dB bandwidth is approximately equal to the gain-bandwidth product divided by the noise gain of the circuit. For gains less than 40, higher-order poles in the amplifier's transfer function contribute to even higher closed loop band- widths. For example, the EL2075C has a -3dB bandwidth of 400MHz at a gain of +10, dropping to 200MHz at a gain of +20. It is important to note that the EL2075C has been designed so that this “extra” bandwidth in low-gain applications does not come at the expense of stability. As seen in the typical performance curves, the EL2075C in a gain of +10 only exhibits 1.5dB of peaking with a 100 Ω load. Output Drive Capability The EL2075C has been optimized to drive 50 Ω and 75Ω loads. It can easily drive 6VPP into a 50Ω load. This high output drive capability makes the EL2075C an ideal choice for RF and IF applications. Furthermore, the cur- rent drive of the EL2075C remains a minimum of 50mA at low temperatures. The EL2075C is current-limited at the output, allowing it to withstand momentary shorts to ground. However, power dissipation with the output shorted can be in excess of the power-dissipation capa- bilities of the package. Capacitive Loads Although the EL2075C has been optimized to drive resistive loads as low as 50 Ω, capacitive loads will decrease the amplifier's phase margin which may result in peaking, overshoot, and possible oscillation. For opti- mum AC performance, capacitive loads should be reduced as much as possible or isolated via a series out- put resistor. Coax lines can be driven, as long as they are terminated with their characteristic impedance. When properly terminated, the capacitance of coaxial cable will not add to the capacitive load seen by the amplifier. Capacitive loads greater than 10pF should be buffered with a series resistor (Rs) to isolate the load capacitance from the amplifier output. A curve of recommended Rs vs Cload has been included for reference. Values of Rs were chosen to maximize resulting bandwidth without additional peaking. Printed-Circuit Layout As with any high-frequency device, good PCB layout is necessary for optimum performance. Ground-plane con- struction is highly recommended, as is good power supply bypassing. A 1µF–10µF tantalum capacitor is recommended in parallel with a 0.01µF ceramic capaci- tor. All lead lengths should be as short as possible, and all bypass capacitors should be as close to the device pins as possible. Parasitic capacitances should be kept to an absolute minimum at both inputs and at the output. Resistor values should be kept under 1000 Ω to 2000Ω because of the RC time constants associated with the parasitic capacitance. Metal-film and carbon resistors are both acceptable, use of wire-wound resistors is not recommended because of parasitic inductance. Simi- larly, capacitors should be low-inductance for best performance. If possible, solder the EL2075C directly to the PC board without a socket. Even high quality sockets |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |