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EL2125CS 数据表(PDF) 3 Page - Elantec Semiconductor |
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EL2125CS 数据表(HTML) 3 Page - Elantec Semiconductor |
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3 / 10 page ![]() 3 EL2125C - Preliminary Ultra-low Noise, Low Power, Wideband Amplifier Electrical Characteristics VS = ±15V, TA = 25°C, RF = 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified. Parameter Description Conditions Min Typ Max Unit DC Performance VOS Input Offset Voltage (SO8 & PDIP8) -0.2 2 mV Input Offset Voltage (SOT23-5) 3 mV TCVOS Offset Voltage Temperature Coefficient TBD µV/°C IB Input Bias Current -30 -21 µA IOS Input Bias Current Offset 0.16 1 µA TCIB Input Bias Current Temperature Coefficient TBD nA/°C CIN Input Capacitance 2.2 pF AVOL Open Loop Gain 75 86 dB PSRR Power Supply Rejection Ratio [1] 75 95 dB CMRR Common Mode Rejection Ratio [2] 75 100 dB CMIR Common Mode Input Range TBD V VOUT Output Voltage Swing No load, RF = 1kΩ 13.5 V VOUTL Output Voltage Swing Positive, RF = 180Ω, RL = 500Ω 12.1 V Negative -11.3 V IOUT Output Short Circuit Current [3] 100 150 mA IS Supply Current 10.8 12 mA AC Performance - RG = 20Ω, CL = 5pF BW -3dB Bandwidth 220 MHz BW ±0.1dB ±0.1dB Bandwidth 23 MHz BW ±1dB ±1dB Bandwidth 63 MHz Peaking Peaking 2.5 dB SR Slew Rate VOUT = 2VPP, measured at 20% to 80% TBD 225 V/µs OS Overshoot, 4Vpk-pk Output Square Wave 0.6 % TS Settling Time to 0.1% of ±1V Pulse TBD ns VN Voltage Noise Spectral Density 0.95 nV/ √Hz IN Current Noise Spectral Density 2.1 pA/ √Hz HD2 2nd Harmonic Distortion [4] TBD dBc HD3 3rd Harmonic Distortion [4] TBD dBc THD Total Harmonic Distortion [5] TBD dBc IMD Intermodulation Distortion [6] TBD % 1. Measured by moving the supplies from ±13.5V to ±16.5V 2. Measured by moving the inputs from +13.5V to -14.4V 3. Pulse test only 4. Frequency = 10MHz, VOUT = 1Vpk-pk, into 100Ω and 5pF load 5. Frequency = 20MHz, VOUT = -20dBm (0.0274VRMS) into 500Ω and 15pF load 6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, RLOAD = 500Ω and 15pF |
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