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EL4451 数据表(PDF) 2 Page - Elantec Semiconductor |
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EL4451 数据表(HTML) 2 Page - Elantec Semiconductor |
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2 / 12 page ![]() EL4451C Wideband Variable-Gain Amplifier Gain of 2 Absolute Maximum Ratings (T A e 25 C) Va Positive Supply Voltage 165V VS Va to Vb Supply Voltage 33V VIN Voltage at any Input or Feedback Va to Vb DVIN Difference between Pairs of Inputs or Feedback 6V IIN Current into any Input or Feedback Pin 4mA IOUT Continuous Output Current 30mA PD Maximum Power Dissipation See Curves TA Operating Temperature Range b 40 Cto a85 C TS Storage Temperature Range b 60 Cto a150 C Important Note All parameters having MinMax specifications are guaranteed The Test Level column indicates the specific device testing actually performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJeTCeTA Test Level Test Procedure I 100% production tested and QA sample tested per QA test plan QCX0002 II 100% production tested at TA e 25 C and QA sample tested at TA e 25 C TMAX and TMIN per QA test plan QCX0002 III QA sample tested per QA test plan QCX0002 IV Parameter is guaranteed (but not tested) by Design and Characterization Data V Parameter is typical value at TA e 25 C for information purposes only Open-Loop DC Electrical Characteristics Power Supplies at g5V T A e 25 C RL e 500X Parameter Description Min Typ Max Test Units Level VDIFF Signal input differential input voltage - Clipping 18 20 I V 02% nonlinearity 13 V V VCM Common-mode range of VIN VDIFF e 0 Vs e g5V g 20 g 28 I V Vs e g15V g 128 V V VOS Input offset voltage 7 25 I mV VOS FB Output offset voltage 8 25 I mV VG 100% Extrapolated voltage for 100% gain 19 21 22 I V VG 0% Extrapolated voltage for 0% gain b 016 b 006 006 I V VG 1V Gain at VGAIN e 1V 095 105 115 I VV IB Input bias current (all inputs) b 20 b 90 I mA IOS Input offset current between VIN aand VINb 02 4 I mA Gaina and Gainb FB and Ref NL Nonlinearity VIN between b1V and a1V VG e 1V 02 05 I % Ft Signal feedthrough VG eb1V b 100 b 70 I dB RIN VIN Input resistance VIN 100 230 I K X RIN FB Input resistance FB 200 460 V K X RIN RGAIN Input resistance gain input 50 100 I K X 2 |
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