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L6226PDTR 数据表(PDF) 17 Page - STMicroelectronics

部件名 L6226PDTR
功能描述  DMOS dual full bridge driver
PDF  31 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6226PDTR 数据表(HTML) 17 Page - STMicroelectronics

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L6226
Application information
Doc ID 9452 Rev 4
17/31
5
Application information
A typical application using L6226 is shown in Figure 14. Typical component values for the
application are shown in Figure 8. A high quality ceramic capacitor in the range of 100 to
200 nF should be placed between the power pins (VSA and VSB) and ground near the
L6226 to improve the high frequency filtering on the power supply and reduce high
frequency transients generated by the switching. The capacitors connected from the
ENA/OCDA and ENB/OCDB nodes to ground set the shut down time for the Bridge A and
Bridge B respectively when an over current is detected (see overcurrent protection). The two
current sources (SENSEA and SENSEB) should be connected to power ground with a trace
length as short as possible in the layout. To increase noise immunity, unused logic pins are
best connected to 5 V (high logic level) or GND (low logic level) (see pin description).
It is recommended to keep power ground and signal ground separated on PCB.
Figure 14.
Typical application
Table 8.
Component values for typical application
C1
100uF
D1
1N4148
C2
100nF
D2
1N4148
CBOOT
220nF
RCLA
5k
Ω
CP
10nF
RCLB
5k
Ω
CENA
5.6nF
RENA
100k
Ω
CENB
5.6nF
RENB
100k
Ω
CREF
68nF



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