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JSST112 数据表(PDF) 2 Page - Vishay Siliconix

部件名 JSST112
功能描述  N-Channel JFETs
PDF  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

JSST112 数据表(HTML) 2 Page - Vishay Siliconix

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J/SST111 Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST111
J/SST112
J/SST113
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = –1 mA , VDS = 0 V
–55
–35
–35
–35
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 5 V, ID = 1 mA
–3
–10
–1
–5
–3
V
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
20
5
2
mA
VGS = –15 V, VDS = 0 V
–0.005
–1
–1
–1
Gate Reverse Current
IGSS
TA = 125_C
–3
nA
Gate Operating Current
IG
VDG = 15 V, ID = 10 mA
–5
pA
VDS = 5 V, VGS = –10 V
0.005
1
1
1
Drain Cutoff Current
ID(off)
TA = 125_C
3
nA
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, VDS = 0.1 V
30
50
100
W
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Dynamic
Common-Source Forward
Transconductance
gfs
VDS = 20 V, ID = 1 mA
6
mS
Common-Source
Output Conductance
gos
VDS = 20 V, ID = 1 mA
f = 1 kHz
25
mS
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA
f = 1 kHz
30
50
100
W
Common-Source
Input Capacitance
Ciss
VDS = 0 V, VGS =
-10 V
7
12
12
12
Common-Source Reverse Transfer
Capacitance
Crss
VDS = 0 V, VGS =
-10 V
f = 1 MHz
3
5
5
5
pF
Equivalent Input
Noise Voltage
en
VDG = 10 V, ID = 1 mA
f = 1 kHz
3
nV
⁄
√Hz
Switching
td(on)
2
Turn-On Time
tr
VDD = 10 V, VGS(H) = 0 V
2
td(off)
VDD = 10 V, VGS(H) = 0 V
See Switching Circuit
6
ns
Turn-Off Time
tf
15
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NCB
b.
Pulse test: PW
v300 ms duty cycle v3%.



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