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JSST113 数据表(PDF) 3 Page - Vishay Siliconix

部件名 JSST113
功能描述  N-Channel JFETs
PDF  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

JSST113 数据表(HTML) 3 Page - Vishay Siliconix

  JSST113 Datasheet HTML 1Page - Vishay Siliconix JSST113 Datasheet HTML 2Page - Vishay Siliconix JSST113 Datasheet HTML 3Page - Vishay Siliconix JSST113 Datasheet HTML 4Page - Vishay Siliconix JSST113 Datasheet HTML 5Page - Vishay Siliconix JSST113 Datasheet HTML 6Page - Vishay Siliconix  
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J/SST111 Series
Vishay Siliconix
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
0
–10
0
200
160
0
rDS
IDSS
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
100
0
1
10
100
VGS(off) = –2 V
–4 V
–8 V
TA = 25° C
On-Resistance vs. Temperature
200
–55
25
125
0
–15
85
ID = 1 mA
rDS changes X 0.7%/_C
VGS(off) = –2 V
–4 V
–8 V
Turn-On Switching
5
0
–10
4
3
2
1
0
tr
td(on) @
ID = 3 mA
td(on) @
ID = 12 mA
tr approximately independent of ID
VDD = 5 V, RG = 50 Ω
VGS(L) = –10 V
Turn-Off Switching
30
010
24
18
12
6
0
tf @
VGS(off) = –2 V
tf @
VGS(off) = –8 V
td(off)
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
Capacitance vs. Gate-Source Voltage
30
–20
24
18
12
6
0
f = 1 MHz
Ciss @ VDS = 0 V
Crss @ VDS = 0 V
0
VGS(off) – Gate-Source Cutoff Voltage (V)
TA – Temperature ( _C)
VGS – Gate-Source Voltage (V)
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
ID – Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
–2
–4
–6
–8
–35
120
80
40
5
45
65
105
–2
–4
–6
–8
24
6
8
–4
–8
–12
–16



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