JSST201 datasheet(3/6 Pages) VISHAY

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J/SST201 Series

Vishay Siliconix

Document Number: 70233

S-40393—Rev. G, 15-Mar-04

www.vishay.com

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Gate Leakage Current

012

420

1.6

1.2

0.8

0.4

Output Characteristics

VDS − Drain-Source Voltage (V)

VGS = 0 V

−0.6 V

−0.9 V

−0.3 V

VGS(off) = −1.5 V

−1.2 V

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

0.1 pA

1 pA

10 pA

100 pA

1 nA

10 nA

015

VDG − Drain-Gate Voltage (V)

IGSS @ 125_C

IGSS @ 25_C

TA = 125_C

TA = 25_C

ID = 100 mA

ID = 500 mA

IG @ ID = 500 mA

ID = 100 mA

−5

−4

−3

−2

−1

VGS(off) − Gate-Source Cutoff Voltage (V)

IDSS @ VDS = 10 V, VGS = 0 V

gfs @ VDS = 10 V, VGS = 0 V

f = 1 kHz

gfs

IDSS

1500

−3

−5

−4

−2

−1

1200

900

600

300

0.01

0.1

1.6

0.8

0.4

400

012

420

360

160

Output Characteristics

Common-Source Forward Transconductance

vs. Drain Current

ID − Drain Current (mA)

VGS(off) − Gate-Source Cutoff Voltage (V)

VDS − Drain-Source Voltage (V)

TA = −55_C

125_C

−0.2 V

−0.4 V

−0.1 V

−0.3 V

rDS @ ID = 100 mA, VGS = 0 V

gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz

rDS

gos

1.2

240

VGS(off) = −0.7 V

25_C

−0.5 V

VDS = 10 V

f = 1 kHz

VGS(off) = −1.5 V

VGS = 0 V

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