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STP75N75F4 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP75N75F4
功能描述  N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP75N75F4 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP75N75F4
4/12
Doc ID 023484 Rev 1
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID = 250 µA, VGS = 0
75
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = 75 V
1
µA
VDS = 75 V,TC=125 °C
100
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 39 A
0.0092
0.011
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
5015
pF
Coss
Output capacitance
-
382
-
pF
Crss
Reverse transfer
capacitance
218
pF
Qg
Total gate charge
VDD = 37.5 V, ID = 78 A,
VGS = 10 V
(see Figure 14)
76
nC
Qgs
Gate-source charge
-
23
-
nC
Qgd
Gate-drain charge
18.5
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 37.5 V, ID = 39 A
RG =4.7 Ω VGS = 10 V
(see Figure 13)
-
25
33
-
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
-
61
14
-
ns
ns



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