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STP77N6F6 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP77N6F6
功能描述  N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 package
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP77N6F6 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP77N6F6
4/13
DocID024067 Rev 2
2
Electrical characteristics
(TJ= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero gate voltage
Drain current
VDS = 60 V, VGS = 0
10
µA
VDS = 60 V, VGS= 0,
TJ=125 °C
100
µA
IGSS
Gate-body leakage
current
VGS = ± 20 V, VDS = 0
± 100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 38.5 A
0.0063
0.007
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
4295
-
pF
Coss
Output capacitance
-
292
-
pF
Crss
Reverse transfer
capacitance
-190
-
pF
Qg
Total gate charge
VDD = 30 V, ID = 77 A,
VGS = 10 V
-
70.5
-
nC
Qgs
Gate-source charge
-
19.7
-
nC
Qgd
Gate-drain charge
-
16.2
-
nC
Rg
Intrinsic gate resistance
f = 1 MHz open drain
-
2.2
-
Ω
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 30 V, ID = 77 A
RG =4.7 Ω VGS = 10 V
-22
-
ns
tr
Rise time
-
42
-
ns
td(off)
Turn-off-delay time
-
73
-
ns
tf
Fall time
-
16
-
ns



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