STS5DNF60L datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STS5DNF60L

4/12

Doc ID 14509 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 15 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

1.7

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2 A

VGS = 4.5 V, ID = 2 A

0.035

0.045

0.055

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

Forward

transconductance

VDS =25 V, ID =2 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

1030

140

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 48 V, ID = 4 A,

VGS = 4.5 V

(see

Figure 13)

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

Rise time

VDD = 30 V, ID = 2.2 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 12)

td(off)

Turn-off delay time

Fall time

VDD = 30 V, ID = 2.2 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 12)

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