STX0560 datasheet(3/13 Pages) STMICROELECTRONICS

部件名	STX0560

功能描述	High voltage fast-switching NPN power transistor

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 13 page

STX0560

Electrical characteristics

Doc ID 18336 Rev 3

3/13

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 800 V

µA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 10 mA

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

sustaining voltage (IB = 0)

IC = 10 mA

600

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.5 A

IB = 100 mA

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 0.5 A

IB = 100 mA

hFE

DC current gain

IC = 5 mA

VCE = 5 V

IC = 20 mA

VCE = 5 V

Resistive load

Rise time

Storage time

Fall time

VCC=200 V, IC=0.3 A

IB1=60 mA, IB2=-120 mA

Tp=30 µs

140

4.4

220

µs

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