CSDL468 datasheet(1/4 Pages) CDIL

部件名	CSDL468

功能描述	NPN SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	4 Pages

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制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSDL468

TO-92L

Plastic Package

Low Frequency Power Amplifier

Complementary CSBL562

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNITS

Collector Base Voltage

VCBO

V

Collector Emitter Voltage

VCEO

V

Emitter Base Voltage

VEBO

V

Collector Current

IC

A

Collector Current Peak

ICM

A

Collector Power Dissipation @ Ta=25ºC

PC

W

Junction Temperature

Tj

ºC

Storage Temperature

Tstg

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Base Voltage

VCBO

IC=10µA, IE = 0

25

V

Collector Emitter Voltage

VCEO

IC=1mA, IB = 0

20

V

Emitter Base Voltage

VEBO

IE=10µA, IC = 0

5.0

V

Collector Cut Off Current

ICBO

VCB=20V, IE = 0

1.0

µA

DC Current Gain

*hFE

IC=0.5A, VCE=2V

85

240

Collector Emitter Saturation Voltage

*VCE (sat)

IC=0.8A, IB=0.08A

0.5

V

Base Emitter On Voltage

*VBE (on)

IC=0.5A, VCE=2V

1.0

V

Output Capacitance

Cob

IE=0, VCB=10V, f=1MHz

22

pF

Transition Frequency

fT

IC=500mA, VCE=2V

190

MHz

hFE Classification

CSDL468Rev271205E

*Pulse Test: Pulse Width <300

µµs, Duty Cycle<2%

VALUE

25

B 85 - 170,

C 120 - 240

20

5.0

1.0

0.9

1.5

- 55 to +150

150

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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