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CSD363 数据表(PDF) 2 Page - Continental Device India Limited |
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CSD363 数据表(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page ![]() Continental Device India Limited Data Sheet Page 2 of 3 Total power dissipation up to TC = 25°C Ptot max. 40 W Junction temperature Tj max. 150 ºC Storage temperature Tstg –65 to +150 ºC CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 250V ICBO max. 1.0 mA Breakdown voltages IC = 20 mA; IB = 0 VCEO min. 120 V IC = 1 mA; IE = 0 VCBO min. 300 V IE = 1 mA; IC = 0 VEBO min. 8.0 V Saturation voltages IC = 1 A; IB = 0.1 A VCEsat max. 1.0 V VBEsat max. 1.5 V D.C. current gain IC = 1A; VCE = 5V** hFE min. 40 max. 240 Transition frequency IC = 0.5A; VCE = 5V fT typ. 10 MHz **hFE classification: R: 40-80 O: 70-140 Y: 120-240 CSD363 |
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