CSC2786 datasheet(1/3 Pages) CDIL

部件名	CSC2786

功能描述	NPN SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

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制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSC2786

TO-92

Plastic Package

For use in FM RF Amplifier

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)

DESCRIPTION

SYMBOL

UNITS

Collector Emitter Voltage

VCEO

V

Collector Base Voltage

VCBO

V

Emitter Base Voltage

VEBO

V

Base Current

IB

mA

Collector Current

IC

mA

Power Dissipation @ Ta=25ºC

PC

mW

Junction Temperature

Tj

ºC

Storage Temperature Range

Tstg

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN TYP

MAX

UNITS

Collector Cut Off Current

ICBO

VCB =30V, IE = 0

100

nA

Emitter Cutoff Current

IEBO

VEB =4V, Ic = 0

100

nA

Collector Emitter Saturation Voltage

VCE(sat)

IC = 10mA, IB = 1.0mA

0.30

V

Base Emitter On Voltage

VBE(on)

VCE = 6.0V,Ic = 1.0mA

0.72

V

DC Current Gain

*hFE

VCE = 6.0V, IC = 1.0 mA

40

180

Transition Frequency

fT

VCE = 6.0V, Ic = - 1.0mA

400

MHz

Power Gain

Gpe

VCE = 6.0V, IE = - 1.0mA, RG =50kΩ

18

dB

f = 100MHz

Collector to Base Time Constant

Cc rb'b

VCE = 6.0V, IE = - 1.0mA, f=31.9MHz

15

ps

Output Capacitance

Cob

VCB = 6V, IE =0, f =1MHz

1.30

pF

Noise Figure

NF

VCE = 6.0V, IE = - 1.0mA, RG =50kΩ

5.00

dB

f = 100MHz

*hFE Classifications

4

- 55 to + 150

20

VALUE

20

30

20

250

+150

MF : 40 - 80

LF : 60 - 120

KF : 90 - 180

E C

B

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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