CSC1685 datasheet(1/3 Pages) CDIL

部件名	CSC1685

功能描述	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	3 Pages

Scroll/Zoom	100%

制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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1 / 3 page

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CSC1684, CSC1685

TO-92

Plastic Package

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

CSC1684

UNITS

Collector Emitter Voltage

VCEO

25

V

Collector Base Voltage

VCBO

30

V

Emitter Base Voltage

VEBO

7

V

Collector Current Peak

ICP

200

mA

Collector Current

IC

100

mA

Power Dissipation @ Ta=25ºC

PC*

400

mW

Junction Temperature

Tj

150

ºC

Storage Temperature Range

Tstg

- 55 to +150

ºC

*PC=250mW/Potting type: PC=250mW

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Cut off Current

ICBO

VCB=10V, IE = 0

1.0

µA

Collector Cut off Current

ICEO

VCE=10V, IB = 0

100

µA

Collector Base Voltage

VCBO

IC=10µA, IE=0

CSC1684

30

V

CSC1685

60

V

Collector Emitter Voltage

VCEO

IC=2mA, IB=0

CSC1684

25

V

CSC1685

50

V

Emitter Base Voltage

VEBO

IE=10µA, IC=0

7

V

DC Current Gain

hFE*

VCE=10V, IC=2mA

160

460

hFE

VCE=2V, IC=100mA

90

Collector Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=10mA

0.5

V

Transition Frequency

fT

IC=2mA, VCE=10V

150

MHz

Output Capacitance

Cob

IE=0, VCB=10V,f=1MHz

3.5

pF

*hFE Classifications

CSC1685

50

60

VCE =10V, IC=1mA,

Gv=80dB Rg=100kΩ,

Function=FLAT

300

NV

Noise Figure

mV

Q : 160 - 260

R : 200 - 340

S : 290 - 460

E C

B

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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