PNP SILICON PLASTIC POWER TRANSISTOR

CSB1436

(9AW)

TO126

MARKING : CDIL

B1436

R

Low Freq.Power AMP.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

30

V

Collector -Emitter Voltage

VCEO

20

V

Emitter Base Voltage

VEBO

6

V

Collector Current (DC)

IC

5

A

Pulse*

10

A

Collector Power Dissipation

PC

1.5

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

*Single Pulse Pw=10ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

20

-

-

V

Collector Base Voltage

VCBO

IC=50uA, IE=0

30

-

-

V

Emitter Base Voltage

VEBO

IE=50uA,IC=0

6

-

-

V

Collector Cut off Current

ICBO

VCB=20V, IE=0

-

-

500

nA

ICEO

VCE=20V,IB=0

-

-

1

uA

Emitter Cut off Current

IEBO

VBE=5V,IC=0

-

-

500

nA

Collector Emitter Saturation Voltage

VCE(Sat)** IC=4A,IB=0,1A

-

-

1

V

DC Current Gain

hFE

IC=0.5A, VCE=2V

82

-

390

Dynamic Characteristics

Transition Frequency

ft

VCE=6V,IC=50mA,

-

120

-

MHz

f=100MHz

Collector Output Capacitance

Cob

VCB=20V, IE=0

-

60

-

pF

f=1MHz

hFE CLASSIFICATION

P : 82-180;

Q : 120-270;

R: 180-390

**Pulse Test

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company