CSB810 datasheet(1/3 Pages) CDIL

部件名	CSB810

功能描述	PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR

PDF	3 Pages

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制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR

CSB810

(9AW)

TO-220

MARKING : CSB

810

Designed for Relay Drive and Motor Drive

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

110

V

Collector -Emitter Voltage

VCEO

110

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

8.0

A

t=50ms

ICP

12

A

Base Current

IB

1.0

A

Collector Power Dissipation @ Ta=25 deg C

PC

2.0

W

Collector Power Dissipation @ Tc=25 deg C

60

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=5mA, IB=0

110

-

V

Collector Cut off Current

ICBO

VCB=110V, IE=0

-

100

uA

Emitter Cut off Current

IEBO

VEB=5V,IC=0

-

3.0

mA

Collector Emitter Saturation Voltage

VCE(Sat)

IC=5A,IB=5mA

-

2.5

V

DC Current Gain

hFE

IC=2A, VCE=3V

1.0

-

20

K

IC=8A, VCE=3V

1.0

-

K

Dynamic Characteristics

Transition Frequency

ft

VCE=12V,IC=0.5A,

-

100

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

110

-

pF

f=1MHz

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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