CP749 datasheet(1/5 Pages) CDIL

部件名	CP749

功能描述	PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	5 Pages

Scroll/Zoom	100%

制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS

CP749

TO-92

Plastic Package

Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and

Audio Amplifier

Complementary CN649

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

UNITS

Collector Base Voltage

V

Collector Emitter Voltage

V

Emitter Base Voltage

V

Peak Pulse Current

A

Collector Current Continuous

A

Power Dissipation @ Ta=25ºC

W

Derate Above 25ºC

mW/ºC

Power Dissipation @ Ta=25ºC

W

Power Dissipation @ TC=25ºC

W

Operating and Storage Junction

Temperature Range

ºC

* Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min

10mm x 10 mm, copper

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MAX

UNITS

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

V

Collector Base Voltage

VCBO

IC=100µA, IE=0

V

Emitter Base Voltage

VEBO

IE=100µA, IC=0

V

Collector Cut Off Current

ICBO

VCB=30V, IE=0

100

nA

VCB=30V, IE=0, Ta=100ºC

10

µA

Emitter Cut Off Current

IEBO

VEB=4V, IC=0

100

nA

Collector Emitter Saturation Voltage

**VCE (sat)

IC=1A, IB=100mA

0.3

V

IC=2A, IB=200mA

0.6

V

Base Emitter Saturation Voltage

**VBE (sat)

IC=1A, IB=100mA

1.25

V

Base Emitter on Voltage

**VBE (on)

IC=1A, VCE=2V

1.0

V

DC Current Gain

**hFE

IC=50mA,VCE=2V

IC=1A, VCE=2V

300

IC=2A, VCE=2V

IC=6A, VCE=2V

**Pulse Condition: Pulse Width = 300

µµs, Duty Cycle < 2%.

CP749_Rev2 211204E

0.9

7.2

70

MIN

Tj, Tstg

100

75

25

35

5.0

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

PD

VALUE

35

25

5

6

2

10

- 65 to +150

*PD

1.1

PD

2.2

E B

C

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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