数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

TIP150 数据表(PDF) 2 Page - Bourns Electronic Solutions

部件名 TIP150
功能描述  NPN SILICON POWER DARLINGTONS
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  BOURNS [Bourns Electronic Solutions]
网页  http://www.bourns.com
标志 BOURNS - Bourns Electronic Solutions

TIP150 数据表(HTML) 2 Page - Bourns Electronic Solutions

  TIP150 Datasheet HTML 1Page - Bourns Electronic Solutions TIP150 Datasheet HTML 2Page - Bourns Electronic Solutions TIP150 Datasheet HTML 3Page - Bourns Electronic Solutions TIP150 Datasheet HTML 4Page - Bourns Electronic Solutions TIP150 Datasheet HTML 5Page - Bourns Electronic Solutions  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS
2
PRODU CT
INFORMA TION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CBO
Collector-base
breakdown voltage
IC =
1 mA
IE = 0
TIP150
TIP151
TIP152
300
350
400
V
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 10 mA
(see Note 4)
IB = 0
TIP150
TIP151
TIP152
300
350
400
V
ICEO
Collector-emitter
cut-off current
VCE =300 V
VCE = 350 V
VCE = 400 V
IB =0
IB =0
IB =0
TIP150
TIP151
TIP152
250
250
250
µA
ICEX(sus)
Collector-emitter
sustaining current
VCLAMP = V(BR)CEO
7A
IEBO
Emitter cut-off
current
VEB =
8 V
IC =0
15
mA
hFE
Forward current
transfer ratio
VCE =
5 V
VCE =
5 V
VCE =
5 V
IC = 2.5 A
IC =
5A
IC = 7 A
(see Notes 4 and 5)
150
50
15
VCE(sat)
Collector-emitter
saturation voltage
IB = 10 mA
IB = 100 mA
IB = 250 mA
IC = 1A
IC = 2A
IC = 5A
(see Notes 4 and 5)
1.5
1.5
2
V
VBE(sat)
Base-emitter
saturation voltage
IB = 100 mA
IB = 250 mA
IC = 2A
IC = 5A
(see Notes 4 and 5)
2.2
2.3
V
VEC
Parallel diode
forward voltage
IE =
7 A
IB = 0
(see Notes 4 and 5)
3.5
V
hfe
Small signal forward
current transfer ratio
VCE =
5 V
IC = 0.5 A
f = 1 kHz
200
|h
fe|
Small signal forward
current transfer ratio
VCE =
5 V
IC = 0.5 A
f = 1 MHz
10
Cob
Output capacitance
VCB = 10 V
IE = 0
f = 1 MHz
100
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.56
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
CθC
Thermal capacitance of case
0.9
J/°C
inductive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
MIN
TYP
MAX
UNIT
tsv
Voltage storage time
IC = 5 A
V(clamp) = V(BR)CEO
IB(on) = 250 mA
RBE = 47 Ω
3.9
µs
tsi
Current storage time
4.7
µs
trv
Voltage transition time
1.2
µs
tti
Current transition time
1.2
µs
txo
Cross-over time
2.0
µs
OBSOLET
E



Html Pages

1 2 3 4 5


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com