PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

2N5679

2N5681

2N5680

2N5682

PNP

NPN

TO-39

TO-39

These Are High Voltage & High Current, General Purpose Transistors

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

2N5679

2N5680

UNITS

2N5681

2N5682

Collector -Emitter Voltage

VCEO

100

120

V

Collector -Base Voltage

VCBO

100

120

V

Emitter -Base Voltage

VEBO

4.0

V

Collector Current Continuous

IC

1.0

A

Base Current

IB

0.5

A

Power Dissipation @Ta=25 degC

PD

1.0

W

Derate Above 25deg C

5.7

mW/deg C

Power Dissipation @Tc=25 degC

PD

10

W

Derate Above 25deg C

57

mW/deg C

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

17.5

deg C/W

Junction to Ambient

Rth(j-a)

175

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

2N5679

2N5680

UNITS

2N5681

2N5682

Collector -Emitter Voltage

VCEO(sus) IC=10mA,IB=0

>100

>120

V

Collector-Cut off Current

ICBO

VCB=100V, IE=0

<1.0

-

uA

VCB=120V, IE=0

-

<1.0

uA

ICEO

VCE=70V, IB=0

<10

-

uA

VCE=80V, IB=0

-

<10

uA

ICEX

VCE=100V,VEB=1.5V

<1.0

-

uA

VCE=120V,VEB=1.5V

-

<1.0

uA

TC=150 deg C

VCE=100V,VEB=1.5V

<1.0

-

mA

VCE=120V,VEB=1.5V

-

<1.0

mA

Emitter-Cut off Current

IEBO

VEB=4V, IC=0

<1.0

<1.0

uA

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

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