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PTB20249 数据表(PDF) 1 Page - Ericsson |
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PTB20249 数据表(HTML) 1 Page - Ericsson |
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1 / 3 page ![]() 1 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collector open) VEBO 4 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD 10 Watts Above 25°C derate by 0.057 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 17.5 °C/W PTB 20249 2.5 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20249 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Typical Output Power vs. Input Power 0 1 2 3 4 5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 Input Power (Watts) VCC = 26 V ICQ = 25 mA f = 1513 MHz Package 20227 2.5 Watts, 26 Vdc Class AB Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride Passivated 20249 LOT CODE 9/28/98 |
类似零件编号 - PTB20249 |
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类似说明 - PTB20249 |
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